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Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction” technology. It maintains both low power loss and noise, lower RDS (on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.
They find application in a wide variety of fields, including consumer and industrial equipment from inverters and NC/Servos to railroads, wind power generation, LED Lighting, automobiles and vehicle-mounted applications.
Low voltage MOSFETS offer low on-resistance and high gate resistance. Medium voltage MOFSETS contribute to the improvement of power supply efficiency with low on-resistance, low noise and low switching loss. High temperature MOSFETS achieve continuous operation at 1500 Centigrade through chip optimization, improved reliability and heat resistance of the package
The “Super J MOS®” Series using super-junction technology has been developed mainly for 600 V withstand voltage products.

Features & Benefits

  • High performance chips
  • ーX series / V series IGBT for low loss operation
  • ーSiC-SBD for low loss operation
  • The same package lineup as the conventional Si-IGBT modules



Selection Guide